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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon BCW68GLT1 3 COLLECTOR 1 BASE 1 2 3 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V V V CEO CBO EBO Value - 45 - 60 - 5.0 - 800 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING BCW68GLT1 = DH ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0 ) Collector-Emitter Breakdown Voltage (IC = -10 Adc, VEB = 0 ) Emitter-Base Breakdown Voltage (I E= -10 Adc, I C = 0) Collector Cutoff Current (VCE = -45 Vdc, I E= 0 ) (VCE = -45 Vdc, I B= 0 , TA = 150C) Emitter Cutoff Current (VEB = - 4.0 Vdc, I C = 0) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. I EBO V (BR)CEO V (BR)CES V (BR)EBO - 45 - 60 - 5.0 -- -- -- -- -- -- Vdc Vdc Vdc I CES -- -- -- -- -- -- - 20 - 10 - 20 nAdc Adc nAdc M12-1/2 LESHAN RADIO COMPANY, LTD. BCW68GLT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 120 160 60 V CE(sat) V BE(sat) Min Typ Max Unit -- ON CHARACTERISTICS DC Current Gain ( IC= -10 mAdc, VCE = -1.0 Vdc ) ( IC= -100 mAdc, VCE = -1.0 Vdc ) ( IC= -300 mAdc, VCE = -1.0 Vdc ) Collector-Emitter Saturation Voltage ( IC = - 300 mAdc, IB = -30 mAdc ) Base-Emitter Saturation Voltage ( IC = - 500 mAdc, IB = -50 mAdc ) -- -- -- -- -- 400 -- -- - 1.5 - 2.0 Vdc Vdc -- -- SMSMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product fT (I C = -20mAdc, V CE = -10 Vdc, f = 100 MHz) Output Capacitance C obo (V CB = - 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance C ibo (V EB = -0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure NF (V CE = - 5.0 Vdc, I C = - 0.2 mAdc, R S = 1.0 k, f = 1.0 kHz, BW = 200 Hz) 100 -- -- MHz -- -- -- -- -- -- 18 105 10 pF pF dB M12-2/2 |
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